energy bandgap
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- 能隙
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- Another good review article on the wide bandgap nitrides.
另一篇不错的宽能隙氮化物系列的论文。 - Although the energy bandgap can be reduced in the dilute InGaAsN channel, the InGaAsN material must be growth in low temperatures.
虽然在砷化铟镓的材料中加入微量氮元素可以使其能隙下降,然而四元氮砷化铟镓材料却必须在低温下成长。
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